By irradiating the nuclear material SiC, the characteristics of continuous wide energy spectrum, short pulse and high instantaneous current intensity of the laser-accelerated proton beam have been characterized. The SiC samples were placed at a distance of 4 cm from the target. The 300 shots proton beams were irradiated with a continuous wide energy spectrum proton beam of 1–4.5 MeV, which satisfied the exponential energy spectrum distribution. The surface and cross-section Raman characterizations showed that the intensity of the SiC scattering peaks after irradiation were reduced. The overall trend of Raman cross-section measurement was consistent with the depth of the distribution of energy loss by SRIM simulation. Thus, the experimental characterization of laseraccelerated proton beam with continuous energy distribution was realized. In addition, experiments showed that the short pulse characteristic of the laser-accelerated proton beam could produce a relatively high instantaneous beam current density on the SiC surface. The ultra-fast wide energy spectrum irradiation provides a possibility in simulated reactor neutron irradiation.

In order to provide a more convenient and economical approach of graphene synthesis on semiconducting 6H-SiC, commercially available single crystalline 6H-SiC samples were implanted at room temperature with 5 keV carbon ions. The prepared samples were characterized by Raman spectroscopy, scanning electron microscope (SEM) and atomic force microscope (AFM). Moreover, the influences of cooling rates and the enclosed environment were investigated. A possible growth mechanism based on the Si sublimation was also put forward to explain the graphene growth. The results show that the graphite enclosure effectively control the Si sublimation and the cooling rate affects the precipitation and surface self-assembly of C atoms. Upon proper cooling, the implanted carbon atoms segregate to the surface and self-assemble into bilayer or multilayer graphene on 6H-SiC. This method reduces the annealing temperature to 1100℃ in vacuum condition without hydrogen etching, ultrahigh vacuum or special atmosphere, which is more cost-effective and efficient.